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| NTE2955 MOSFET N-Channel, Enhancement Mode High Speed Switch Application: D CS Switch for CRT Display Monitor Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain-Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Gate-Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Avalanche Drain Current (Pulsed, L = 200H), IDA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32W Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Channel-to-Case, Rth(ch-c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.91C/W Isolation Voltage (AC for 1 minute, Terminal-to-Case), VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V Electrical Characteristics: (Tch = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source ON Resistance Drain-Source On-State Voltage Forward Transfer Admittance Symbol Test Conditions VGS = 20V, VDS = 0V VDS = 250V, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 5A VGS = 10V, ID = 5A VGS = 10V, ID = 5A Min 250 - - 2.0 - - - Typ - - - 3.0 0.40 2.0 9.0 Max - 10 1.0 4.0 0.52 2.6 - Unit V A mA V V S V(BR)DSS VDS = 0V, ID = 1mA IGSS IDSS VGS(th) RDS(on) VDS(on) |yfs| Electrical Characteristics (Cont'd): (Tch = +25C unless otherwise specified) Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf VSD IS = 5A, VGS = 0V VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50 Test Conditions VGS = 0V, VDS = 25V, f = 1MHz Min - - - - - - - - Typ 950 90 25 20 25 150 40 0.95 Max - - - - - - - - Unit pF pF pF ns ns ns ns V .181 (4.6) Max .114 (2.9) .126 (3.2) Dia Max .405 (10.3) Max Isol .252 (6.4) .622 (15.0) Max G D S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54) |
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